http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0258698-A2

Outgoing Links

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filingDate 1987-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e4512bd0a0eeb0e0c32222956af04bf
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publicationDate 1988-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0258698-A2
titleOfInvention Dry etching method
abstract Etching of an article is carried out by maintaining the article at a temperature at which the vapor pressure of etching gas molecules becomes equal to or higher than the pressure of etching gas and the vapor pressure of neutral radicals contained in a plasma becomes equal to or lower than the pressure of an etching gas. An etching pattern with a substantially vertical side profile and extremely small in dimensional shift from the mask can be formed at high precision.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5002631-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0353719-A2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0289131-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0445981-A3
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priorityDate 1986-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 38.