| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-12528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-97
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S428-901
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49155
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31721
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-12396
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-95 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3121 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
1986-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
1989-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0230615-A3 |
| titleOfInvention |
Silicon-containing polyimides as oxygen etch stop and dual dielectric coatings |
| abstract |
The use of silicon-containing polyimide as an oxygen etch barrier nin a metal lift-off process and as an oxygen etch stop in the nfabrication of multi-layer metal structures is described. In npractice, a lift-off layer (12) is applied on a substrate (10), nfollowed by a layer of silicon-containing polyimide (14) and a nlayer of photoresist (16). The photoresist is lithographically npatterned, and the developed image is transferred into the nsilicon-containing polyimide layer with a reactive ion etch using a nCF₄/O₂ gas mixture. The pattern is transferred to the lift-off nlayer in a reactive ion etch process using oxygen. Subsequent nblanket metal evaporation (22) followed by removal of the lift-off nstencil results in the desired metal pattern on the substrate. In nan alternate embodiment, the silicon-containing polyimide can be ndoped with a photoactive compound reducing the need for a nseparate photoresist imaging layer on the top. |
| priorityDate |
1986-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |