http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0219697-A2

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filingDate 1986-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_52757cf73ee586ceacb86dc5183ed142
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publicationDate 1987-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0219697-A2
titleOfInvention Laser induced halogen gas etching of metal substrates
abstract A process for radiation induced dry etching a metallised (e.g. copper) substrate is disclosed wherein the substrate is exposed to a patterned beam of laser radiation in a halogen gas atmosphere which is reactive with the substrate to form a metal halide salt reaction product to accelerate the formation of the metal halide salt without its substantial removal from the substrate. The metal halide salt is removed from the substrate by contact of the substrate with a solvent for the metal halide salt.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5318662-A
priorityDate 1985-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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