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filingDate 1984-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce24c667085f4d6698742eed397932bd
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publicationDate 1985-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0149779-A2
titleOfInvention Laser induced chemical etching of metals with excimer lasers
abstract Disclosed is a method of etching a metallized substrate by excimer laser radiation. The substrate is exposed to a selected gas, e.g., a halogen gas, which spontaneously reacts with the metal forming a solid reaction product layer on the metal by a partial consumption of the metal. A beam of radiation from an excimer laser, e.g. XeF laser operating at a wavelength of 351 nm or XeCl laser at 308 nm or KrF laser at 248 nm or KrCi laser at 222 nm or ArF laser at 193 nm or F<sub>2</sub> laser at 157 nm, is applied to the reaction product in a desired pattern to vaporize the reaction product and thereby selectively etch the metal with a high resolution.
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