http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0197044-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c0aa4909604b53e92db230cad6ecf893 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate | 1985-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_422ae45441ab1f8728f03f63454a0e6c |
| publicationDate | 1986-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0197044-A1 |
| titleOfInvention | Process for etching polysilicon with freon 11 and another gas |
| abstract | In a polysilicon etching process, CFCl3 (freon 11) and another gas, typically SF6, are mixed beforehand in a storage chamber (11) before being brought into an etching chamber (5). This process prevents condensation of the freon 11 in the supply line and the resulting failure of the mass flow control device (3) due to ingestion of liquid. In addition, since the gases are mixed beforehand and as a single mass flow control device is used, the accuracy of the mixture does not depend on the precision of the mass flow control device. |
| priorityDate | 1984-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.