Predicate |
Object |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-743 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-74 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-761 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
filingDate |
1985-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
1992-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
1992-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
EP-0166983-B1 |
titleOfInvention |
Method of selectively exposing the sidewalls of a trench and its use to the forming of a metal silicide substrate contact for dielectric filled deep trench isolated devices |
priorityDate |
1984-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |