http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0126758-A1
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1e19836144c0de2d92af658f0ed2d9ab |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
filingDate | 1983-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_92606806c3e2958044a0ef5c05db78e5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06a29d48abf93361ed2b7fd31f852dc1 |
publicationDate | 1984-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | EP-0126758-A1 |
titleOfInvention | ANISOTROPICAL ETCHING METHOD FOR SILICIDES. |
abstract | A method of anisotropic etching of semiconductor products comprising a lower dielectric layer (12), an intermediate layer of polysilicon (14) and an upper layer of silicide (16) such as titanium silicide. A path defining layer (20) normally covers the silicide layer to define target areas to attack. In a first step, the silicide is attacked using Freon 115 chloro, pentafluoroetane (C2ClF5) in a plasma etching chamber conditioned to obtain etching by ion reaction. Etching is completed in the same chamber using a second gas which comprises an amount of Cl2 chosen to etch anisotropically through the polysilicon layer without substantially attacking the dielectric layer. Preferably, the two attacks take place after covering the internal surfaces of the attack chamber with a material which releases molecules of a character included in the trace definition layer, such as Kapton, a polyamide, in the example. described. |
priorityDate | 1982-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.