http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0126758-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1e19836144c0de2d92af658f0ed2d9ab
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
filingDate 1983-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_92606806c3e2958044a0ef5c05db78e5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06a29d48abf93361ed2b7fd31f852dc1
publicationDate 1984-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0126758-A1
titleOfInvention ANISOTROPICAL ETCHING METHOD FOR SILICIDES.
abstract A method of anisotropic etching of semiconductor products comprising a lower dielectric layer (12), an intermediate layer of polysilicon (14) and an upper layer of silicide (16) such as titanium silicide. A path defining layer (20) normally covers the silicide layer to define target areas to attack. In a first step, the silicide is attacked using Freon 115 chloro, pentafluoroetane (C2ClF5) in a plasma etching chamber conditioned to obtain etching by ion reaction. Etching is completed in the same chamber using a second gas which comprises an amount of Cl2 chosen to etch anisotropically through the polysilicon layer without substantially attacking the dielectric layer. Preferably, the two attacks take place after covering the internal surfaces of the attack chamber with a material which releases molecules of a character included in the trace definition layer, such as Kapton, a polyamide, in the example. described.
priorityDate 1982-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419516085
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415830539
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6431
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419578708
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID15008962
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6336889
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6430
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419545355
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID414329572
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6392
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419545752
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID135446
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419517548

Total number of triples: 29.