http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-4429902-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_526cb931f1382d6e016ee651d55e1365 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-948 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3121 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-265 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1994-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ffd399d5135860c6be1d2daa1c1a782 |
| publicationDate | 1995-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-4429902-A1 |
| titleOfInvention | Method of forming a fine pattern in a semiconductor device |
| abstract | Method for forming a fine pattern in a semiconductor device, comprising the steps of: providing a target material layer, to be provided with a pattern and to be covered with a photosensitive film, on the upper side of the semiconductor substrate, selective exposure of the surface of the photosensitive film to define a region in the surface of the photosensitive film which is to be provided with a pattern, diffusing silicon into the surface of the photosensitive film by using hexamethyldisilane (HMDS) or tetramethyldisilane (TMDS) for forming a uniformly thin silanised photosensitive material film on a non-exposed surface of the photosensitive film and a thick silanised photosensitive material film in the form of a convex lens on the exposed surface of the photosensitive film, etching the silanised photosensitive material layer and the photosensitive film with a plasma that contains NF3/O2 with a predetermined thickness for removing the edge of the convex lens-shaped silanised photosensitive material in order to form a silanised photosensitive material pattern which defines in finely formed fashion the region to be provided with a pattern, and anisotropic etching of the photosensitive film exposed through the silanised photosensitive material pattern with an oxygen-based plasma for selective exposure of the ... Original abstract incomplete. |
| priorityDate | 1993-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.