| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0b08374cf0cad9c6f3b663da00787c13 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-974 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0243
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02 |
| filingDate |
1999-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f52d1769d3722872fffac773810715d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_183c734bea842c49f50ffbc88a630734 |
| publicationDate |
2001-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-19960823-A1 |
| titleOfInvention |
Epitaxial semiconductor wafer and method for its production |
| abstract |
The invention relates to a semiconductor wafer with a front and a back and an epitaxial layer of semiconducting material deposited on the front, characterized in that the surface of the epitaxial layer has a maximum density of 0.14 scattered light centers per cm · 2 · with a scattering cross section of has greater than or equal to 0.12 mum and the front side of the semiconductor wafer has a surface roughness of 0.05 to 0.29 nm RMS, measured by AFM on a 1 mum by 1 mum reference surface, before the epitaxial layer is deposited. The invention further relates to a method for producing a semiconductor wafer with a front side and a rear side and an epitaxial layer made of semiconducting material deposited on the front side. The method comprises the following process steps: DOLLAR A (a) as a single polishing step, an abrasion polishing step; DOLLAR A (b) cleaning and drying the semiconductor wafer; DOLLAR A (c) pretreating the front side of the semiconductor wafer at a temperature of 950 to 1250 degrees Celsius in an epitaxy reactor and DOLLAR A (d) depositing the epitaxial layer on the front side of the pretreated semiconductor wafer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8268708-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102009004557-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03088332-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1605498-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7138325-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102009004557-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7008881-B2 |
| priorityDate |
1999-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |