http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102009004557-B4
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6ac179bcbad17b8ea0260c65f201da92 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02658 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02019 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02 |
| filingDate | 2009-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17439e37d50cb8a81ab86cab4d42940a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_683cd2e40103a81df118a989a1a449c5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90d0c87e5a85ef22da00d69452df9ec3 |
| publicationDate | 2018-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102009004557-B4 |
| titleOfInvention | Epitaxial silicon wafer and process for producing epitaxially coated silicon wafers |
| abstract | A process for the production of epitaxial silicon wafers in which a plurality of silicon wafers polished at least on their front sides are provided and successively coated one after the other in an epitaxial reactor by depositing one of the provided concavely polished silicon wafers on a susceptor in a reactor chamber of the epitaxy reactor, by means of Injectors in the reactor chamber introduced gas flows can be distributed by means of valves in an outer and an inner zone of the reactor chamber, so that the gas flow in the inner zone to an area around the center of the silicon wafer and the gas flow in the outer zone acts on an edge region of the silicon wafer wherein the silicon wafer in a first step only in a hydrogen atmosphere at a hydrogen flux of 1-100 slm and in a second step with the addition of an etching medium with a flow of 1.5-5 slm to the hydrogen atmosphere, wherein a In the second step, the hydrogen flow is 1-100 slm and the distribution of the etching medium in the inner and outer zone I / O = 0-0.75 is pretreated so that the concave input geometry of the polished silicon wafer is compensated or overcompensated and then on its epitaxial coated front side and removed from the epitaxy. |
| priorityDate | 2009-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.