| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7af673589ca45d2fd8b9ea902cdbd1dc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01P2015-0814 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01P15-0802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00158
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01L9-0042 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01P15-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01L9-00 |
| filingDate |
1999-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11a121a66446546de09037db8ff9cc79
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9dfa377ab321ee0110c8c50846cbe6a9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86173697c2c17bbad524ab181c237075 |
| publicationDate |
2007-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-19903380-B4 |
| titleOfInvention |
Semiconductor sensors for a physical size and their manufacturing processes |
| abstract |
A semiconductor physical quantity sensor comprising: a semiconductor substrate (11; 111; 221) of a P-type; an N-type semiconductor layer (12; 112; 222) formed on a main surface of the semiconductor substrate (11; 111; 221); a buried insulating film (14; 114; 224) penetrating the N-type semiconductor layer (12; 112; 222) and expanding into the semiconductor substrate (11; 111; 221); and a displaceable portion (2; 102; 202) displaced by the physical quantity, wherein the displaceable portion (2; 102; 202) is formed by electrochemically etching the P-type semiconductor substrate (11; 111; 221) from one side of the Main surface is formed using the buried insulating film (14; 114; 224) as a stopper. |
| priorityDate |
1998-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |