| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3213 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
1998-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2000-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bdbf895fba58d1131ff7a1dc6f1345f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51ad99a919c5a820e45e8a6bfddc86e0 |
| publicationDate |
2000-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-19856082-C1 |
| titleOfInvention |
Process for structuring a metal-containing layer |
| abstract |
A method for structuring a metal-containing layer is proposed. The metal-containing layer (4) is etched using an etching mask (8) in a plasma-assisted etching gas atmosphere at a temperature above 130 ° C. in the presence of at least one halogen compound and at least one oxidizing agent, the concentration of the oxidizing agent being higher than the concentration of the halogen compound . |
| priorityDate |
1998-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |