| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_526cb931f1382d6e016ee651d55e1365 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
1997-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b86c450ad2350370cfd897c51cda542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0166abeaaf3dfb1cf78f4accdf67bd2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4d17cba2860c8156a1e48bfb6d57d5f |
| publicationDate |
1998-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-19756227-A1 |
| titleOfInvention |
Method for forming metal lines of a semiconductor device |
| abstract |
A barrier layer 12 (eg TiN) is formed over an interlayer insulator layer 11, an interconnect layer 13 (eg tungsten) is formed over the barrier layer, and an antireflection film 14 is formed over the interconnect layer. A patterned photoresist layer 15 is used for masking the underlying metallic layers during a high density plasma etch at low temperature. A highly selective etch process which produces vertical sidewalls is obtained by increasing the source power and decreasing the bias power, and by adjusting the element concentration ratio in the etch gas. |
| priorityDate |
1996-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |