| abstract |
A semiconductor device mfg. method comprises: (a) forming an intermediate thin film (13), as a diffusion-preventing or adhesive thin film, on a substrate (11); (b) growing a first conductive thin film (15), contg. mainly copper with a trace of oxygen, on the intermediate thin film (13) by CVD from a copper-contg. organometallic cpd. source gas and an oxidising gas; and (c) growing a second conductive thin (16) of mainly copper by CVD from the source gas alone. Also claimed is a similar method in which step (c) is followed by (d) heat treating the conductive thin films at above the temp. used in the CVD steps. Further claimed are CVD units. |