| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12d24c0a12c3ecdb6d9a47d623d96e76 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0661
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26586
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66325 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate |
2012-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29b7a71bfaca7406b7f4d81c68b94147 |
| publicationDate |
2013-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-112012000501-T5 |
| titleOfInvention |
Process for producing a reverse-blocking semiconductor element |
| abstract |
In a method of manufacturing a reverse blocking semiconductor element, a tapered groove is formed and ions are implanted in a back surface and the tapered groove. Then, a furnace annealing process and a laser annealing process are performed to form a back collector layer and a release layer (4) on the side surface of the tapered groove. In this way, even in a process of manufacturing a diffusion layer formed by forming a tapered groove and performing ion implantation and annealing process for the side surface of the tapered groove as the separation layer (4) for bending the termination of a backward groove Breakdown voltage pn junction, so that it expands to the surface having manufacturing process to ensure a reverse breakdown voltage and to reduce a leakage current when a reverse bias is applied. |
| priorityDate |
2011-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |