Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66363 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66734 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41775 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41783 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41741 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41725 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-407 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66348 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28525 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-76 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-485 |
filingDate |
2008-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70c623f2a66a7082cd62d84aa6a8f07e |
publicationDate |
2010-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
DE-112008002270-T5 |
titleOfInvention |
MOS structures with a lower contact resistance and method for their production |
abstract |
A method of making a MOS structure (100), the method comprising the steps of: Providing a semiconductor substrate (106); Forming a gate stack (146) on the semiconductor substrate; Forming a doped region (116) in the semiconductor substrate in an aligned manner with the gate stack; Forming adjacent contact lands (186) extending from the doped region; Forming a metal silicide layer (126) on the contact lands; and Producing a contact (122) on at least a portion of the metal silicide layer on at least one of the contact lands. |
priorityDate |
2007-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |