http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10356177-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-423 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2003-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68e915eabbd82d62f9df44259b9d27ca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db804d75262044f911e03da012278476 |
| publicationDate | 2005-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-10356177-A1 |
| titleOfInvention | Method for producing a semiconductor device |
| abstract | A method of manufacturing a semiconductor device includes a process of forming a photoresist pattern. In the disclosed process, residual photoresist polymers are removed using a photoresist remover composition containing: DOLLAR A a) 5% to 15% sulfuric acid based on the total weight of said composition, DOLLAR A b) 1% to 5% hydrogen peroxide or 0, 0001% to 0.05% ozone, based on the total weight of the composition, DOLLAR A c) 0.1% to 5% acetic acid, based on the total weight of the composition, DOLLAR A d) 0.0001% to 0.5% ammonium fluoride , based on the total weight of the composition, and DOLLAR A e) as a residual amount of water. |
| priorityDate | 2003-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.