http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10244409-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate | 2002-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2fe19e6986b76604b6ba8f6a48521f5b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2edf78501ef2c2aa0e0c883952d22c26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67c6777b988acee793d8e9891b44ba9e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_005f9a98f59b31b8a9df304448c2e138 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9389e133771553d122bfa283086b013a |
| publicationDate | 2003-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-10244409-A1 |
| titleOfInvention | Method for processing a wafer and device for carrying out the same |
| abstract | A method and apparatus for processing a wafer in the manufacture of a semiconductor device and a method and apparatus for etching a material formed on the wafer are disclosed, wherein first and second cooling elements have an ambient temperature near a plurality of wafers set to a first temperature, wherein the wafers are processed by supplying a reaction gas at the first temperature, and then a heating element rapidly raises the temperature of the atmosphere in the vicinity of the wafers from the first temperature to the second temperature in order to avoid by-products that occur during the Processing has been generated, partially separating, and maintaining the second temperature to separate most of the by-products from the wafer, and further performing the processing steps in-situ within the same space. Accordingly, a natural (native) oxide layer formed on numerous wafers can be etched and reaction by-products can be removed in-situ in the same chamber so that productivity is improved. |
| priorityDate | 2001-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.