| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K1-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-0035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2201-0179
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2203-107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K1-0298
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-027 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K1-0242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-062
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-061 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K1-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K1-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K1-02 |
| filingDate |
2002-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c5ace09282c2f7c6b2d7f13fb027a91 |
| publicationDate |
2004-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-10236466-A1 |
| titleOfInvention |
Process for the production of high-frequency technical usable electrical line structures |
| abstract |
A method for the production of high frequency technical usable electrical line structures on a line structure carrier with positional distances substantially smaller than 180 µm, e.g. B. 30 microns specified using microstrip lines. According to this method, there is a combination of a laser structuring method with an etching method in conjunction with a resist which, at least with regard to the lasering in the laser structuring method, the etching in the etching method and its maximum thin applicability to the conductor structure carrier, has properties which are at least those of chemical tin or correspond to an amorphous resist. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102021211807-A1 |
| priorityDate |
2002-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |