| abstract |
Methods for improving the sealing between contact plugs and adjacent dielectric layers and semiconductor devices formed thereby are disclosed. In one embodiment, a semiconductor device includes a first dielectric layer over a conductive feature, a first portion of the first dielectric layer including a first dopant, a metal feature electrically coupled to the conductive feature, the metal feature including a first contact material in contact with the conductive feature includes; a second contact material over the first contact material, the second contact material comprising a material different than the first contact material, a first portion of the second contact material further comprising the first dopant; and a dielectric liner between the first dielectric layer and the metal feature, wherein a first portion of the dielectric liner includes the first dopant. |