| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823871
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76805
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2020-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4526195978869b078587b002746f4994
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_573aeecd7b98dbd4de4ad04458798264
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_701816bed27037a30a99ee9bd9416a20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc92f76ae717916c7ab22d2e5d0f5bc7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0015d05abb0ac60cc3d8d838c74b0e6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5f9fec88b04bbc4f55de18f445c6dbe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e2cc5a6358c837874cb5387a2730f5ba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28289288b45d7fdfada2e624f126ae5a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51fd586b4e2c7df058fe0fc07c6de169 |
| publicationDate |
2021-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102020121496-A1 |
| titleOfInvention |
DIFFERENT THROUGH CONTACT CONFIGURATIONS FOR DIFFERENT THROUGH CONTACT AREA REQUIREMENTS |
| abstract |
Vias are disclosed along with methods for fabricating vias that have lower capacitance and resistance. An exemplary interconnect structure includes first and second source-drain contacts arranged in a dielectric layer. The first source-drain contact is in physical contact with a first source-drain element and the second source-drain contact is in physical contact with a second source-drain element. A first via with a first via layer configuration, a second via with a second via layer configuration and a third via with a third via layer configuration are arranged in the dielectric layer. The first and second vias extend into the first and second source-drain contacts, respectively, and are in physical contact therewith. A first thickness of the first via corresponds to a second thickness of the second via. The third via is in physical contact with a gate structure disposed between the first and second source-drain contacts. |
| priorityDate |
2019-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |