| abstract |
In one embodiment, a device includes: a first reflective structure containing first doped layers of a semiconductor material, alternating ones of the first doped layers being doped with a p-type dopant; a second reflective structure containing second doped layers of the semiconductor material, alternating ones of the second doped layers being doped with an n-dopant; a semiconductor emissive region disposed between the first reflective structure and the second reflective structure; a contact pad on the second reflective structure, a work function of the contact pad being lower than a work function of the second reflective structure; a bonding layer on the contact pad, a work function of the bonding layer being higher than the work function of the second reflective structure; and a conductive connector on the bonding layer. |