| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02301
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1602
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0638
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0615
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0619
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02115 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-26 |
| filingDate |
2016-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74e201dfc17ba3acc66f68f776b10b86
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe2e2e0c8d3aa0ffb8f27b780530c2bf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b43c001246053adc4702f8a99db80856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7cfd9408b7271b48dc4cc4975e3a9ee3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_811281fadad8713ea77f0b687b80c888 |
| publicationDate |
2016-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102016109610-A1 |
| titleOfInvention |
Method for processing a semiconductor layer, method for processing a silicon substrate and method for processing a silicon layer |
| abstract |
According to various embodiments, a method (100) of processing a semiconductor layer may include: generating an etching plasma in a plasma chamber of a remote plasma source, the plasma chamber of the remote plasma source being coupled to a processing chamber for processing the semiconductor layer (110); Introducing the etching plasma into the processing chamber to remove a natural oxide layer from a surface of the semiconductor layer and at most a negligible amount of semiconductor material of the semiconductor layer (120); and subsequently depositing a dielectric layer directly on the surface of the semiconductor layer (130). |
| priorityDate |
2015-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |