| abstract |
A method of forming a semiconductor device structure, comprising: forming a conductive pattern (14, 142, 144) over a substrate (110); forming a dielectric layer (150) over the substrate (110) to cover the conductive pattern; a first mask layer (170a) over the dielectric layer (150), the first mask layer (170a) comprising alumina or titania, and the first mask layer having a plurality of holes (176a); forming a second mask layer (180) forming the holes (176a ), wherein the second mask layer (180) has a first opening (182) exposing the holes (176a) over a portion of the conductive pattern (142); removing the dielectric layer (150) below the holes (176a) exposed by the first opening (182) to form a plurality of first through holes (152) in the dielectric layer (150) to expose the conductive pattern (142); and forming a plurality of conductive pillars (190, 190a) in the first through holes (152). |