http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102014112671-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d38394d211ce1c910c2c1899c46bbd09 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-564 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3447 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0068 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-56 |
| filingDate | 2014-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31e1c2f57c6252ae96d855f861e06e63 |
| publicationDate | 2016-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102014112671-A1 |
| titleOfInvention | Magnetron arrangement, processing arrangement and method for reactive sputtering |
| abstract | According to various embodiments, a magnetron assembly (100) may include: a magnetron cathode (102k) having a material to be sputtered; a magnet assembly (102m) disposed relative to the magnetron cathode such that a plasma forming region (106) is provided over the material to be sputtered, wherein the plasma forming region comprises two elongated regions (106g) and two reverse regions (106k) annularly connecting the longitudinal regions ; a gas supply arrangement (108) having at least a first gas inlet (108a) and at least one second gas inlet (108b), wherein the gas supply arrangement (108) is arranged, the two longitudinally extending regions (106g) of the plasma formation region by means of the at least one first gas inlet (108a) to supply with a reactive gas (110a), and the two Umkehrbereiche (106k) of the plasma formation region by means of the at least one second gas inlet (108b) with an inert gas (110b) to flush such that in the two areas of reversal (106k) of the plasma formation substantially only the inert gas (110b) is present. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102015117845-A1 |
| priorityDate | 2014-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.