| abstract |
Housing (400A, 400B) comprising: a chip (100) which is formed in a first region (I) of the housing (400A, 400B); a molding compound (204) in a second (II) region of the housing (400A, 400B), adjacent to the first region is formed; a first polymer layer (206) formed on the chip and the molding compound; a second polymer layer (210) formed on the first polymer layer; a plurality of interconnect structures (208) formed between the first polymer layer and the second polymer layer; a metal-insulator-metal, MIM, capacitor (300) formed on the second polymer layer and electrically connected to at least one of the plurality of interconnect structures; and a metal bump (218) which is formed over at least one of the plurality of connection structures (208) and is electrically connected to the latter, wherein the MIM capacitor (300) comprises a lower metal layer (310), a dielectric capacitor layer (320) and an upper metal layer (330) which are on a surface of the second polymer layer (210) and in an opening (210a) of the second polymer layer are formed. |