| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_58a19a951e76670d7b53acca7b7e6c67 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-677 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32192
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-677
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-509
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02107 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-509
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
2010-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_76b9b98fd7fac734214c0fc0dfe3ae01 |
| publicationDate |
2021-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102010056020-B4 |
| titleOfInvention |
Method and apparatus for forming a dielectric layer on a substrate |
| abstract |
Method for forming a dielectric layer on a substrate (2), in which a plasma is generated from a process gas between the substrate (2) and a plasma electrode (24; 300) formed from two electrodes and opposite the substrate (2), whereby an at least partial chemical reaction of the substrate (2) and process gas and / or an at least partial deposition of process gas components to form the dielectric layer on the substrate (2) results, the distance between the plasma electrode (24; 300) and the substrate (2 ) is reduced during the chemical reaction and / or the deposition of the process gas components. |
| priorityDate |
2009-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |