| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd446fb0d73aa96d044fea2eaa3c8ebc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2009-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f685f7de3431f900636113d02f1ba5e0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3da8bc0bb99ce4d666fc31f1762c996 |
| publicationDate |
2011-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102009028256-A1 |
| titleOfInvention |
A method of etching silicon carbide using a plasma etching method and silicon carbide substrate |
| abstract |
The invention relates to a method for etching silicon carbide by means of a plasma etching process and a silicon carbide substrate. The method according to the invention for etching silicon carbide (SiC) comprises the steps of: a) etching the silicon carbide with a first ionized process gas comprising a fluorine-containing gas; b) etching the silicon carbide with a second ionized process gas comprising oxygen (O 2 ), wherein the steps a) and b) are performed alternately. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9040427-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102016202523-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115400774-A |
| priorityDate |
2009-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |