| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a62c92e56568bd104089aac22ca487b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b4ef0fb7e0dfd596dbbe4854597b9c21 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01019
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-3025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-15311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N19-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-427
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3677
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-522 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283 |
| filingDate |
2008-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa5eb9197752eaa9cd29bf6144ea89fc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a82b09cbc7ffef349a901bb572ede293
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf497f53662ab70af7ba20515b7b65c8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e70f91e7b13eb6fcf9df82c3c3eb1325 |
| publicationDate |
2010-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102008063416-A1 |
| titleOfInvention |
Heat dissipation in temperature-critical device areas of semiconductor devices by heat conduction, which are connected to the substrate back |
| abstract |
By providing heat sinks or heat pipes in temperature critical regions of a semiconductor device, better performance, reliability, and packing density can be achieved. The heat sinks may be fabricated based on standard fabrication techniques and may be placed in close proximity to the individual transistor elements and / or may be used to shield specific circuit areas. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102012206289-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102012206289-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8994036-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2654078-A2 |
| priorityDate |
2008-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |