| abstract |
In a semiconductor device, a via that extends through the substrate of the device is fabricated based on a carbon-containing material, thereby achieving excellent compatibility with high temperature processes, while also providing good electrical performance data compared to doped semiconductor materials and the like. Thus, in some illustrative embodiments, the via contacts are fabricated prior to process steps used to form critical circuit elements, thereby substantially avoiding exposure of the via contact structure to a device level of the corresponding semiconductor device. Consequently, very efficient three-dimensional integration schemes can be realized. |