http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102007045734-B3

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
filingDate 2007-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2008-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_511fc280dd28a3e5a0fef97b8ad0259c
publicationDate 2008-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-102007045734-B3
titleOfInvention Method of manufacturing an integrated circuit and integrated circuit made therewith
abstract A method of fabricating an integrated circuit comprising patterning an insulating material (100) and a semiconductive material (110), wherein the insulating material (100) and the semiconductive material (110) are adjacent, comprising the steps of:. Partial removal of the semiconductive material (110); , Surface treating the partially removed semiconductive material (110); , partially removing the insulating material (100), wherein the partial removal of the semiconductive material (110), the surface treatment of the semiconductive material (110) and the partial removal of the insulating material (100) is performed in at most one process chamber and wherein the process chamber Contains means for generating a plasma.
priorityDate 2007-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 25.