| abstract |
Itnbe an apparatus and a method for producing anSemiconductor device disclosed. The device contains anTransfer chamber for transporting a substrate, one with the transfer chambernconnected first process chamber configured, a TiSiN layernon the substrate, one connected to the transfer chambernsecond process chamber configured a tantalum layernon the TiSiN layer, and one with the transfer chambernconnected third process chamber, which is configured, a copper seed layernon the tantalum layer. After forming the TiSiN layernbecomes part of the TiSiN layer, which is in contact with the lower metal compoundnis, etched,nthe tantalum layer is formed on the TiSiN layer, which innContact with the exposed lower metal connection is thatnCopper seed layer is formed on the tantalum layer, andnthen the copper compound is formed on the copper seed layer.nIn this way, the copper compound can be formed efficientlynbecome. |