| abstract |
Method for producing a porous semiconducting structure, characterized, that A. doped metal halide particles are generated, and then B. from the obtained after step A half metal particles, a dispersion is generated, and then C. a substrate is coated with the dispersion obtained after step B, and subsequently D. the layer obtained after step C is treated by a solution of hydrogen fluoride in water, and subsequently E. the layer obtained after step D is thermally treated, whereby a porous semiconductive structure is obtained. |