| abstract |
BynTo runnan electroless deposition process and an electroplating deposition processnIn-situ can be extremely reliable metallizationsnbe created, with restrictions in thenWith regard to contamination and component size reduction, which in conventionalnCVD, ALD and PVD methods fornthe production of seed layers can be found avoidednbecome. In some embodimentsna barrier layer is also based on a wet chemicalnSeparation process formed. |