http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102005063129-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a62c92e56568bd104089aac22ca487b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76237 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 |
| filingDate | 2005-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_068ef1c9f20bab60ed341f77fee3540a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a45037e699744f8bfab98507ece818e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f366f6059592c65a482f65554449e56 |
| publicationDate | 2007-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102005063129-A1 |
| titleOfInvention | Trench isolation structure for a semiconductor device with reduced sidewall strain and method of making the same |
| abstract | BynForming a non-oxidizable coating in isolation trenches isnthe generation of a compressive strain significantly reduced, whereinnin illustrative embodimentsnSilicon nitride is used as a coating material. To this endnbecomes the etching behaviornof silicon nitride clearly based on a suitablensurface treatmentnmodified, thereby providing a high level of material integrity during ansubsequent etching processnto remove unmodified areas of the silicon nitridenwhich is also used as an efficient CMP stop layerncan. |
| priorityDate | 2005-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.