http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102004063702-A1

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filingDate 2004-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00b275ce7c164d072fc6181e86fc53b4
publicationDate 2005-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-102004063702-A1
titleOfInvention Method for producing a memory component
abstract There is provided a method of manufacturing a semiconductor device by which oxide on a Cu surface can be removed after contact hole etching using Hf (hafnium) as a barrier material. The method includes the steps of forming a Cu line in at least one protective insulating layer on a substrate, forming a contact hole in the protective insulating layer to expose a portion of the Cu line, forming an Hf-containing layer in the contact hole around the exposed portion cover the embedded Cu line, and forming a conductive layer over the Hf-containing layer.
priorityDate 2003-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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