http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102004047355-B4

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filingDate 2004-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2022-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-102004047355-B4
titleOfInvention Process for the production of mask blanks
abstract A method of manufacturing a mask blank, the method comprising a resist film forming process comprising the steps of: dispensing a resist solution (13) containing a resist material and a solvent onto a square-like substrate (2, 11) having a substrate size of 152.4mm × 152.4 mm (6 in. × 6 in.), rotating the substrate (2, 11) to spread the dispensed resist solution (13) over the substrate (2, 11), and drying the on the substrate (2, 11) distributed resist solution (13), thereby forming a resist film (4) on the substrate (2, 11), wherein: while rotating the substrate (2, 11) in the resist film forming process, an air flow (19) is generated along a top surface of the substrate from a center of the substrate (2, 11) to an outer peripheral portion of the substrate (2, 11); wherein a rotating condition of the substrate (2, 11) in the resist film forming process is changed in the middle of the resist film forming process so that a rotating speed of the substrate (2, 11) differs between a primary stage and a secondary stage of the resist film forming process; the resist solution (.13) contains propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether or methyl isoamyl ketone as a solvent or as a main component of the solvent; the resist solution (13) has a viscosity of at most 10 mPa·s when the resist solution (13) is applied; and the rotation speed of the substrate (2, 11) in the primary stage is 850 to 1900 rpm, a rotation time of the substrate (2, 11) in the primary stage is 1 to 5 seconds and the rotation speed of the substrate (2, 11) in the secondary stage is 100 to 450 rpm.
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