http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102004047023-B4

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filingDate 2004-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2006-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61b6952749691d35c4f8ee0a62ce1903
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publicationDate 2006-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-102004047023-B4
titleOfInvention Dielectric interlayer capacitor structure, method of fabricating the capacitor structure, and use of the capacitor structure
abstract Capacitor structure (1) with A lower electrode layer (5) arranged on a substrate surface (31) of a substrate (3), - An upper electrode layer (6) and - Between the electrode layers (5, 6) arranged crystalline dielectric layer with zinc oxide (2), which has a plurality of zinc oxide single crystals each having a polar crystal axis, wherein - an amorphous dielectric interlayer (4) is arranged between the lower electrode layer (5) and the crystalline dielectric layer with zinc oxide (2), characterized in that - The polar crystal axes of the zinc oxide single crystals of the dielectric layer are tilted against the substrate surface (31).
priorityDate 2004-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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