http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102004047023-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2291-0256 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-435 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2291-0426 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N29-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N29-2437 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H9-15 |
| filingDate | 2004-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc385b76fd6a6c28ec53410f5de85d6f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cfac4ed2d44b21bbf21db97ba6f685d0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61b6952749691d35c4f8ee0a62ce1903 |
| publicationDate | 2006-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102004047023-A1 |
| titleOfInvention | Dielectric interlayer capacitor structure, method of fabricating the capacitor structure, and use of the capacitor structure |
| abstract | ThenThe invention relates to a capacitor structure (1) with one on onenSubstrate (3) arranged lower electrode layer (5), an uppernElectrode layer (6) and one between the electrode layersnarranged, crystalline dielectric layer with zinc oxide (2).nThe capacitor structure is characterized in that betweennthe lower electrode layer and the crystalline dielectricnLayer with zinc oxide an amorphous dielectric interlayern(4) is arranged. In addition, there is also a method for manufacturingnthe capacitor structure according to one of the preceding claims withnthe process steps indicated: a) providing the substrate,nb) producing the lower electrode layer on a substrate surface of thenSubstrate, c) producing the amorphous intermediate layer on the lower onenElectrode layer, d) generating the crystalline dielectric layernwith zinc oxide on the intermediate layer and e) generating the upper onenElectrode layer on the crystalline dielectric layer withnZinc oxide. Through the amorphous dielectric layer can during thenDepositing the zinc oxide can be generated an electric field, thenacross fromna surface normalnthe substrate surfacenor the lower electrode layer is tilted. This will grow thenZinc oxide single crystals tilted up. The result is a crystallinendielectric layer, which are excited to shear thickness vibrationsncan. The capacitor structure is used as piezoacousticnResonator ... |
| priorityDate | 2004-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.