| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7e18df6b8ebc657114a3e5b7b3cdffb2 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8249
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8249 |
| filingDate |
2000-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09b4a036b0f6182f8a981ca400f6c01a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea2601ae095f44d146f98acdfef2fcfa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d05cb50532cdb9377a1928eef4b29e3 |
| publicationDate |
2002-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-10051382-A1 |
| titleOfInvention |
Method for producing a stack from a Si¶3¶N¶4¶ layer and an overlying Si0¶2¶ layer on a semiconductor substrate |
| abstract |
In a method for producing a stack from a Si¶3¶N¶4¶ layer and an overlying SiO¶2¶ layer on a semiconductor substrate, the Si¶3¶N¶4¶ layer is placed in a reactor in an NH¶ 3¶ and bis (tert-butylamino) silane-containing atmosphere at a temperature of 600 to 650 ° C and a pressure of 40 to 53 Pa on the semiconductor substrate. Subsequently, the SiO¶2¶ layer is placed on this layer in the same reactor in an atmosphere containing O¶2¶ and bis (tert-butylamino) silane at a temperature of 600 to 650 ° C. and a pressure of 40 to 53 Pa deposited. |
| priorityDate |
2000-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |