| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823487
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2022-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6358beae36589dcef32ffd5243c471aa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_53261f682a43ec5e2169b71b0ac74340
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b40a638974fb18d79d2feed60c0ee1f2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91afb2faeefa4bf95eff60cd91ef2e9a |
| publicationDate |
2022-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-115207120-A |
| titleOfInvention |
Semiconductor device and method of manufacturing semiconductor device |
| abstract |
Provided is a semiconductor device capable of improving electrical characteristics and integration density. The semiconductor device includes: an active pattern protruding from a substrate, the active pattern including long sidewalls extending in a first direction and facing each other in a second direction; a lower epitaxial pattern on the substrate and covered with a portion of the source pattern; a gate electrode on the lower epitaxial pattern and extending along long sidewalls of the active pattern; and an upper epitaxial pattern on the active pattern and connected to the upper surface of the active pattern. The active pattern includes short sidewalls connected with the long sidewalls of the active pattern, and at least one of the short sidewalls of the active pattern has a curved surface. |
| priorityDate |
2021-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |