http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115132582-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
| filingDate | 2022-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5353149191fad9f7f07fe688f8514b2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91dcf4015496a616eba6b2a6ac15d008 |
| publicationDate | 2022-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-115132582-A |
| titleOfInvention | Substrate processing method and substrate processing apparatus |
| abstract | The present invention provides a substrate processing method and a substrate processing apparatus capable of suppressing a shape defect of a side wall of a recessed portion during etching. The substrate processing method according to the exemplary embodiment is a method of processing a substrate including a film to be etched and a mask provided on the film to be etched and having openings. The method includes the steps of: a step (a) of forming a first layer containing nitrogen atoms and hydrogen atoms on a sidewall of a recess provided in the film to be etched corresponding to the opening using a first process gas; step (b), in After step (a), the first layer is modified into a second layer using a second process gas including a halogen-containing gas; and step (c), after step (b), the recesses are etched using a third process gas. |
| priorityDate | 2021-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.