| abstract |
A semiconductor device is disclosed. The semiconductor device may include: a semiconductor substrate including a protruding active pattern; a first gate pattern disposed on the active pattern and extending to intersect with the active pattern; disposed on the first gate pattern a first capping pattern on the top surface, the first capping pattern having a top surface, sides and rounded edges; and a first insulating pattern covering the sides and edges of the first capping pattern. The thickness of the first insulating pattern on the edge of the first cap pattern is different from the thickness of the first insulating pattern on the outer side of the spacer pattern. |