http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115084044-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8c75643c5e52bb646c38cbc4ff651e2d |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0657 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3185 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76232 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3171 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-56 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 2022-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81633d7d612b603958cf7432587f2c30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15fb92b9870257cb2ee029c3778cab7d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e84170fff9e96c2aae6b08663e97b828 |
| publicationDate | 2022-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-115084044-A |
| titleOfInvention | Semiconductor structure and method of forming the same |
| abstract | A semiconductor structure and a method for forming the same, wherein the method comprises: providing a substrate; forming a mask layer on the substrate, the mask layer exposing a part of the substrate surface; using the mask layer as a mask, using a plasma etching process to etch Etching the substrate, forming trenches and active regions between the trenches in the substrate, the plasma etching process includes: performing a first etching process to form initial trenches in the substrate and between the initial trenches The initial active area of the initial active area, the corner area is formed between the top of the initial active area and the sidewall; the second etching process is performed after the first etching process, and the reaction gas is introduced into the etching cavity to expose the initial trench A first protective layer is formed on the surface of the corner area; a third etching process is performed after the second etching process, and the substrate at the bottom of the initial trench is continued to be etched to form an active region and a trench; The insulating layer is beneficial to protect the corner region of the active region and improve the dimensional stability of the active region. |
| priorityDate | 2022-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.