| abstract |
The present application provides an in-situ SiN-capped GaN-based heterostructure device and a preparation method thereof, and relates to the technical field of semiconductors. The etching method of the in-situ SiN cap of the device first uses fluorocarbon plasma to etch the in-situ SiN cap. Modified, and then removed by Ar plasma bombardment, the etching depth was precisely controlled by the two-step continuous cycle atomic layer etching process, the etching damage of the surface morphology was reduced, a smooth etching surface was obtained, and the in-situ SiN layer selection was effectively reduced. The surface state, defect density, defect size and electrical performance loss of GaN-based heterostructures on the surface after etching, optimize the device ohmic electrode preparation process, so that the in-situ SiN layer can be more widely used in the field of GaN-based heterostructure device preparation. application. |