http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114823301-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_00b05982b59e266f9af78cc072cc2c5e http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5e829b93e1bdf87272f2aaf3baaaa0f4 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28008 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2021-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8a278cd5c5e5d9a73348fea51fb9367 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_594e2c441bf7ae435a7a953278b8db4e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd30aae6ff8e763a0419050884025750 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32fd1261a0af65ad6153e4fae28e1684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5694fcefe74316af648c893ae0a22cf0 |
| publicationDate | 2022-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114823301-A |
| titleOfInvention | Method of forming a semiconductor structure |
| abstract | A semiconductor structure and a method for forming the same, the method comprising: providing a substrate on which a core layer is formed; forming a sidewall material layer conformally covering the core layer and the substrate; removing the core layer and the top side of the substrate wall material layer, the remaining side wall material layer is used as the initial side wall layer, and the initial side wall layer covers the side wall of the core layer; the top of the initial side wall layer is contour modified to form a side wall After forming the sidewall layer, remove the core layer; after removing the core layer, use the sidewall layer as a mask to etch the substrate , forming the target graph. The problem of the collection angle of the etching gas can be improved, so that the target pattern with better morphology can be obtained, thereby improving the performance of the semiconductor. |
| priorityDate | 2021-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5352426 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419524915 |
Total number of triples: 22.