| abstract |
The present disclosure provides a substrate processing method, a component processing method, and a substrate processing apparatus capable of removing substances existing on a surface of a substrate or a component. Provided is a substrate processing method for processing a substrate placed on a substrate support portion in a chamber of a substrate processing apparatus. The substrate processing method includes the following steps: step (a), supplying a processing gas containing hydrogen fluoride gas into the chamber; step (b), controlling the temperature of the substrate support portion to a first temperature, and heating the hydrogen fluoride gas in the chamber and step (c), controlling the temperature of the substrate support portion to be the second temperature, and controlling the pressure of the hydrogen fluoride gas in the chamber to be the second pressure. In the graph in which the horizontal axis is temperature and the vertical axis is pressure, the first temperature and the first pressure are located in the first region higher than the adsorption equilibrium pressure curve of hydrogen fluoride, and the second temperature and second pressure are located in the adsorption equilibrium pressure curve. The second area below. |