| abstract |
The invention discloses a chip bonding alignment structure, a bonding chip structure and a manufacturing method thereof, wherein the chip bonding alignment structure comprises: a semiconductor chip, a metal layer, an etching stop layer, at least one metal bump, and a dielectric barrier layer, silicon oxide layer, and silicon carbonitride layer. The metal layer is on the bonding surface of the semiconductor chip and has a metal alignment pattern. An etch stop layer overlies the bonding surface and the metal layer. The metal bump extends upward from the metal layer through the etch stop layer, and the dielectric barrier layer covers the etch stop layer and the metal bump. A silicon oxide layer covers the dielectric barrier layer. The silicon carbonitride layer covers the silicon oxide layer. |