http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114630501-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_90c7a8bfb3666a3590d1f8563d8266a7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-30 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-04 |
| filingDate | 2021-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6bbe332b2eb632b77f1eeaa20d3dcaef |
| publicationDate | 2022-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114630501-A |
| titleOfInvention | Capacitor Manufacturing Method |
| abstract | The present specification relates to a method for manufacturing a capacitor, including the following steps: a) forming a stack, the stack including a first conductive layer made of aluminum or an aluminum-based alloy, a first electrode, a first dielectric layer in sequence from the upper surface of the substrate layer and second electrode; b) etching the upper portion of the stack by chemical plasma etching interrupted before the upper surface of the first conductive layer; and c) etching the lower portion of the stack by physical plasma etching etching, the physical plasma etching is interrupted on the upper surface of the first conductive layer. |
| priorityDate | 2020-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.