http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114597127-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6a6f422b091ba12ea61d4adbf1b0e8e
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
filingDate 2022-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eebc8ac53b4b3b2507f3d61297dcf63a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1e7b8880d6743ca2c4dec6e6df507a6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67c5afdd48f1c8939c937ffbb3f140c0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_134a6c0b8ccdc7d0b1e1b12191781732
publicationDate 2022-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-114597127-A
titleOfInvention A dual-phase etching process method for optimizing semiconductor trench topography
abstract A dual-phase etching process method for optimizing the morphology of semiconductor trenches is disclosed, which mainly utilizes two etching processes under different conditions to perform cyclic etching, which can suppress the generation of micro-trenches, improve the morphology of the bottom of the device trenches, and improve the "V-groove", "U-groove" and groove topography with flat bottom can be obtained.
priorityDate 2022-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419527022
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID17358

Total number of triples: 18.